@INPROCEEDINGS{ISSCC_PCM_4F2, 
author={Y. Zhang andothers}, 
booktitle={VLSI Technology, 2007 IEEE Symposium on}, title={An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory}, 
year={2007}, 
month=june, 
volume={}, 
number={}, 
pages={98 -99}, 
keywords={Ge;RESET/SET resistance ratio;SET programming;cross-point memory;integrated phase change memory cell;memory cell;nanowire diode;pn-junction;elemental semiconductors;germanium;integrated memory circuits;nanowires;phase change materials;semiconductor diodes;}, 
doi={10.1109/VLSIT.2007.4339742}, 
ISSN={},